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| ON Semiconductort Silicon NPN High-Power Transistor . . . designed for general-purpose power amplifier and switching applications. 2N5882 ON Semiconductor Preferred Device * Collector-Emitter Sustaining Voltage -- * * * VCEO(sus) = 80 Vdc (Min) DC Current Gain -- hFE = 20 (Min) @ IC = 6.0 Adc Low Collector -- Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc High Current -- Gain-Bandwidth Product -- fT = 4.0 MHz (Min) @ IC = 1.0 Adc 15 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 160 WATTS PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII I II II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII II I IIII I I II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Rating Symbol VCEO VCB VEB IC IB Max 80 80 15 30 Unit Vdc Vdc Vdc Adc Adc 5.0 Collector Current -- Continuous Peak Base Current 5.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 0.915 Watts W/_C _C TJ, Tstg -65 to +200 CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol JC Max 1.1 Unit Thermal Resistance, Junction to Case _C/W (1) Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values meet or exceed present JEDEC registered data. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: 2N5882/D 2N5882 t, TIME ( s) III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I III I I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector-Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) VCEO(sus) ICEO ICEX 80 -- -- -- -- -- -- mAdc mAdc 1.0 0.5 5.0 0.5 1.0 Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO IEBO hFE mAdc mAdc -- Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) DC Current Gain (1) (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 6.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) ON CHARACTERISTICS 35 20 4.0 -- -- -- -- -- 100 -- 1.0 4.0 2.5 1.5 -- Collector-Emitter Saturation Voltage (2) (IC = 7.0 Adc, IB = 0.7 Adc) (IC = 15 Adc, IB = 3.75 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 3.75 Adc) Base-Emitter On Voltage (2) (IC = 6.0 Adc, VCE = 4.0 Vdc) Current-Gain -- Bandwidth Product (3) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) VBE(sat) VBE(on) fT Vdc Vdc DYNAMIC CHARACTERISTICS 4.0 MHz pF -- Cob hfe tr tf -- 400 -- Small-Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) Rise Time Fall Time 20 -- -- -- SWITCHING CHARACTERISTICS Storage Time (VCC = 30 Vdc, IC = 6.0 Adc, Vdc 6 0 Adc 0.6 IB1 = IB2 = 0 6 Adc See Figure 2) 0.7 1.0 0.8 s s s ts *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0% (3) fT = |hfe| * ftest. VCC -30 V 2.0 5.0 +10 V 0 -8.0 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% For PNP test circuit, reverse all polarities. RC SCOPE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.2 0.3 tr RB 15 51 D1 +7.0 V FOR CURVES OF FIGURES 3 and 6, RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC = 30 V IC/IB = 10 TJ = 25C td @ VBE(off) 5.0 V D1 MUST BE FAST RECOVERY TYPE, e.g. 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 2.0 3.0 5.0 7.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 10 Figure 2. Switching Times Test Circuit Figure 3. Turn-On Time http://onsemi.com 2 2N5882 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 P(pk) JC(t) = r(t) JC JC = 1.1C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 30 20 10 TJ = 200C 5.0 ms 1.0 ms 0.5 ms 0.1 ms 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 10 7.0 5.0 3.0 t, TIME ( s) 2.0 ts 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 2000 TJ = 25C VCC = 30 V IC/IB = 0 IB1 = IB2 TJ = 25C 1000 C, CAPACITANCE (pF) 700 500 300 200 Cob 100 2.0 3.0 5.0 7.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 10 20 60 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Cib tf Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 3 2N5882 VCE = 4.0 V TJ = +150C 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 2.0 TJ = 25C 1.6 IC = 3.0 A 1.2 0.8 0.4 0 0.03 6.0 A 12 A -55C 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mAdc) 2.0 3.0 Figure 8. DC Current Gain 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) 1.2 0.8 0.4 0 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 0.7 1.0 2.0 3.0 Figure 9. Collector Saturation Region 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltage http://onsemi.com 4 2N5882 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. K M 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N5882 Notes http://onsemi.com 6 2N5882 Notes http://onsemi.com 7 2N5882 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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